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Disilane is mainly used for epitaxial growth, oxide film, nitriding film, chemical vapor deposition and other aspects in the semiconductor industry. The deposition rate of Disilane is much faster than that of silane on amorphous silicon wafers, and the temperature can be reduced by 200 ~ 300 ° C.
The application of electronic grade silane is mainly concentrated in the field of microelectronics, which is used to manufacture high purity silane film and silicon nitride film. These films are widely used in the manufacturing process of microelectronic devices, such as microelectronic circuits, semiconductor devices, sensors, solar cells, etc.
Dichlorosilane can be used as high quality semiconductor silicon source material for chemical vapor deposition (CVD) process and silicon epitaxial chip growth process. In the semiconductor industry, dichlorosilane can be used as a reaction gas to produce silicon atoms and deposit silicon atoms on the substrate to produce silicon epitaxial sheets.
Trimethyl gallium is a very important organometallic compound and has a wide application prospect. It can be used in semiconductor industry, organic synthesis, metal preparation and other fields. With the continuous development of science and technology, the application prospect of trimethyl gallium will be more and more broad.
Trimethylindium has a wide range of applications in organic synthesis, semiconductor materials, optoelectronic devices and other fields, with the continuous progress of science and technology, its application prospects will be more broad.
Trimethylaluminum is an organic compound with the chemical formula C3H9Al and is a colorless transparent liquid. It is mainly used as a catalyst for olefin polymerization, ignition fuel, and also for the production of linear primary alcohols and olefins. It can also be used for the vapor deposition of metal organic compounds.
