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Germane is an inorganic compound with the chemical formula GeH4. It is a colorless gas at room temperature and pressure, stable at room temperature. It begins to decompose at around 280 ℃ and almost completely decomposes into elements Ge and H2 at around 350 ℃. It can burn in the air and emit a blue red flame during combustion, but the degree of combustion is not as intense as that of silane. Mixtures with oxygen or air are prone to explosion. React with alkali metals in liquid ammonia at room temperature. Germanide has strong self catalytic activity, and once it decomposes to form a metal coating, it will rapidly decompose. Therefore, the surface of materials such as piping must be smooth. Insoluble in water, but soluble in hypochlorous acid, slightly soluble in hot concentrated sulfuric acid. Can be decomposed by nitric acid. Can be used to produce high-purity germanium.
Bis(diethylamino)silane is available in high purity and electronic grade forms suitable for semiconductor processing and other applications.
As an important silicon-based precursor material, DIPAS is widely used in vapor deposition and atomic layer deposition techniques to manufacture silicon-based semiconductor thin film materials, such as silicon oxide, silicon nitride, and silicon carbide. These silicon-based semiconductor thin film materials have been used in the manufacturing of high-end capacitors, solar cells, storage devices, lasers, light-emitting diodes, and gas sensing components.
Pentakis(dimethylamino) tantalum, PDMAT is a soild tantalum precursor for TaN barrier layers to prevent copper diffusion in semiconductor application.
High purity Triethylstibane is a supporting material for epitaxial growth using metal organic chemical vapor deposition (MOCVD) technology. It can be used to produce ultra-high brightness LED light-emitting diodes, HEMT high electron mobility transistor devices, semiconductor lasers, infrared detectors, solar cells, etc. It is a key material for the development of the optoelectronic industry, and its purity has a crucial impact on the final optoelectronic devices, especially for the functions of high-power and ultra-high brightness LED chips with high technological content.
Electronic grade TEOS is mainly used in the chemical vapor deposition (CVD) process of IC wafer manufacturing, generating silicon dioxide isolation layers and metal interlayer dielectric films. It is a relatively large amount of electronic chemicals required for the manufacturing of semiconductor integrated circuits, discrete devices, and microelectromechanical systems (MEMS)
