Anhui Argosun Electronic New Materials Co., Ltd

Precursors

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Titanium tetrachloride (TiCl4)

Titanium tetrachloride is an inorganic compound with the chemical formula TiCl4, mainly used for the production of sponge titanium and titanium dioxide powder, and can also be used as a catalyst.

Trimethylantimony （C3H9Sb）

Trimethylantimony, with the molecular formula Sb (CH3) 3, is a colorless and transparent liquid with a garlic odor. It is mainly used in metal organic chemical vapor deposition (MOCVD) processes and organic synthesis in the electronic industry.

Trisilylamine (TSA）

Trimethylsilylamine (chemical formula N(SiH3)3, referred to as TSA), is a colorless, easily hydrolyzed liquid with good fluidity. It has a melting point of -105.6 ° C and a boiling point of +52 ° C.

Diiodosilane （H2I2Si）

Diiodosilane, as a silicon-based precursor material, can rapidly form a uniform and dense silicon nitride (n-Si) film layer in the atomic layer deposition process within a lower temperature window region. This deposited n-Si film layer can meet the requirements of integrated circuit chip manufacturing processes, so diiodiosilane is widely used in the field of advanced semiconductor chip manufacturing.

Pentakis(dimethylamino)tantalum (Ta(NC2H6)5)

Pentakis(dimethylamino)tantalum (PDMAT) is most widely used as a tantalum source for TaN barrier layers to prevent copper diffusion into silicon in multilevel metallizationsemiconductor devices Despite the presence of N in the molecule, it is beneficial to use an additional nitrogen source (i.e. NH3) to obtain high quality films. PDMAT may also be used to deposit Ta2O5 for dielectric applications in similar devices to achieve these films, an oxidising source is used (i.e. H2O/O2). PDMAT reacts vigorously with such sources hence strict inert atmosphere conditions are recommended to avoid degradation and/or premature reaction.

Bis(diethylamino)silane (BDEAS）

Bis(diethylamino)silane is available in high purity and electronic grade forms suitable for semiconductor processing and other applications.

Diisopropylaminosilane (DIPAS）

As an important silicon-based precursor material, DIPAS is widely used in vapor deposition and atomic layer deposition techniques to manufacture silicon-based semiconductor thin film materials, such as silicon oxide, silicon nitride, and silicon carbide. These silicon-based semiconductor thin film materials have been used in the manufacturing of high-end capacitors, solar cells, storage devices, lasers, light-emitting diodes, and gas sensing components.

Pentakis(dimethylamino) tantalum (PDMAT)

Pentakis(dimethylamino) tantalum, PDMAT is a soild tantalum precursor for TaN barrier layers to prevent copper diffusion in semiconductor application.

Triethylstibane （C6H15Sb）

High purity Triethylstibane is a supporting material for epitaxial growth using metal organic chemical vapor deposition (MOCVD) technology. It can be used to produce ultra-high brightness LED light-emitting diodes, HEMT high electron mobility transistor devices, semiconductor lasers, infrared detectors, solar cells, etc. It is a key material for the development of the optoelectronic industry, and its purity has a crucial impact on the final optoelectronic devices, especially for the functions of high-power and ultra-high brightness LED chips with high technological content.

Tetraethoxysilane （ TEOS）

Electronic grade TEOS is mainly used in the chemical vapor deposition (CVD) process of IC wafer manufacturing, generating silicon dioxide isolation layers and metal interlayer dielectric films. It is a relatively large amount of electronic chemicals required for the manufacturing of semiconductor integrated circuits, discrete devices, and microelectromechanical systems (MEMS)

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