Pentakis(dimethylamino)tantalum (PDMAT) is most widely used as a tantalum source for TaN barrier layers to prevent copper diffusion into silicon in multilevel metallizationsemiconductor devices Despite the presence of N in the molecule, it is beneficial to use an additional nitrogen source (i.e. NH3) to obtain high quality films.
PDMAT may also be used to deposit Ta2O5 for dielectric applications in similar devices to achieve these films, an oxidising source is used (i.e. H2O/O2). PDMAT reacts vigorously with such sources hence strict inert atmosphere conditions are recommended to avoid degradation and/or premature reaction.
